ZXMD63P02X
PACKAGE DIMENSIONS
D
DIM
Millimetres
Inches
8
7
6 5
A
MIN
MAX
1.10
MIN
MAX
0.043
A1
0.05
0.15
0.002
0.006
1
2
3 4
B
0.25
0.40
0.010
0.016
C
0.13
0.23
0.005
0.009
eX6
θ°
D
e
E
2.90
0.65
2.90
3.10
BSC
3.10
0.114
0.0256
0.114
0.122
BSC
0.122
B
C
L
H
4.90
BSC
0.193
BSC
Conforms to JEDEC MO-187 Iss A
L
0.40
0.70
0.016
0.028
PAD LAYOUT DETAILS
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH
Zetex Inc.
Zetex (Asia) Ltd.
These are supported by
Streitfeldstra?e 19
47 Mall Drive, Unit 4
3510 Metroplaza, Tower 2
agents and distributors in
D-81673 München
Germany
Commack NY 11725
USA
Hing Fong Road,
Kwai Fong, Hong Kong
major countries world-wide
? Zetex plc 1999
Telefon: (49) 89 45 49 49 0
Telephone: (516) 543-7100
Telephone:(852) 26100 611
Fax: (49) 89 45 49 49 49
Fax: (516) 864-7630
Fax: (852) 24250 494
Internet:http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any
purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the
right to alter without notice the specification, design, price or conditions of supply of any product or service.
ISSUE 1 - JUNE 2004
7
相关PDF资料
ZXMD63P03XTC MOSFET DUAL P-CHAN 30V 8MSOP
ZXMHC10A07T8TA MOSFET H-BRIDGE N/P-CH 100V SM8
ZXMHC3A01N8TC MOSFET H-BRIDGE COMPL 8-SOIC
ZXMHC3F381N8TC MOSFET COMPL H-BRIDGE 30V 8-SOIC
ZXMHC6A07N8TC MOSFET COMPL H-BRIDGE 60V 8-SOIC
ZXMHC6A07T8TA MOSFET H-BRIDGE N/P-CH 60V SM8
ZXMHN6A07T8TA MOSFET N-CHAN 60V 1.6A SOT223-8
ZXMN0545G4TA MOSFET N-CH 450V 140MA SOT-223
相关代理商/技术参数
ZXMD63P03X 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMD63P03X_05 制造商:ZETEX 制造商全称:ZETEX 功能描述:DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMD63P03XTA 功能描述:MOSFET Dual 30V P Chl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMD63P03XTC 功能描述:MOSFET Dual 30V P Chl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMD65N02N8TA 功能描述:MOSFET N-CHAN DUAL 20V 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道(双) FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds(最大)@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A,10V Id 时的 Vgs(th)(最大):3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR
ZXMD65N03N8 制造商:ZETEX 制造商全称:ZETEX 功能描述:DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMD65N03N8TA 功能描述:MOSFET N-CHAN DUAL 30V 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道(双) FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds(最大)@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A,10V Id 时的 Vgs(th)(最大):3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR
ZXMD65P02N8 制造商:ZETEX 制造商全称:ZETEX 功能描述:DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET